Hybrid strained orientated substrates and devices

ABSTRACT

A method for forming a semiconductor structure. The method includes providing a semiconductor structure which includes (a) substrate, (b) a first semiconductor region on top of the substrate, wherein the first semiconductor region comprises a first semiconductor material and a second semiconductor material, which is different from the first semiconductor material, and wherein the first semiconductor region has a first crystallographic orientation, and (c) a third semiconductor region on top of the substrate which comprises the first and second semiconductor materials and has a second crystallographic orientation. The method further includes forming a second semiconductor region and a fourth semiconductor region on top of the first and the third semiconductor regions respectively. Both second and fourth semiconductor regions comprise the first and second semiconductor materials. The second semiconductor region has the first crystallographic orientation, whereas the fourth semiconductor region has the second crystallographic orientation.

This application is a divisional application claiming priority to Ser.No. 11/419,308, filed May 19, 2006.

BACKGROUND OF THE INVENTION

1. Technical Field

The present invention relates to semiconductor substrates and devices,and more specifically, to Hybrid Strained Orientated Substrates andDevices.

2. Related Art

In a typical semiconductor fabrication process, the P-channeltransistors are preferably formed on (110) crystallographic oriented,compressively strained semiconductor region of a substrate, whereas theN-channel transistors are preferably formed on (100) crystallographicoriented, tensily strained semiconductor regions of the same substrateto optimize the operation of transistors. Therefore, there is a need fora method of forming a substrate that has both (110) crystallographicoriented, compressively strained and (100) crystallographic oriented,tensily strained semiconductor regions.

SUMMARY OF THE INVENTION

The present invention provides a semiconductor structure fabricationmethod, comprising providing a semiconductor structure which includes(a) a substrate, (b) a first semiconductor region on top of thesubstrate, wherein the first semiconductor region comprises a firstsemiconductor material and a second semiconductor material, which isdifferent from the first semiconductor material, and wherein the firstsemiconductor region has a first crystallographic orientation, and (c) athird semiconductor region on top of the substrate, wherein the thirdsemiconductor region comprises the first and the second semiconductormaterials, and wherein the third semiconductor region has a secondcrystallographic orientation; and forming a second semiconductor regionand a fourth semiconductor region on top of the first and the thirdsemiconductor regions respectively, wherein the second semiconductorregion comprises the first and the second semiconductor materials,wherein the second semiconductor region has the first crystallographicorientation, wherein the fourth semiconductor region comprises the firstand the second semiconductor materials, and wherein the fourthsemiconductor region has the second crystallographic orientation.

BRIEF DESCRIPTION OF THE DRAWINGS

FIGS. 1-15 show cross-section views of a semiconductor device structuregoing through a fabrication process, in accordance with embodiments ofthe present invention.

DETAILED DESCRIPTION OF THE INVENTION

FIGS. 1-15 show cross-section views of a semiconductor device structure100 going through a fabrication process, in accordance with embodimentsof the present invention. More specifically, with reference to FIG. 1,in one embodiment, the fabrication process of the structure 100 startswith a semiconductor substrate 110. Illustratively, the semiconductorsubstrate 110 comprises a mixture of silicon and germanium and has acrystallographic orientation of (100). It should be noted that thephrase “Si(1−x)Ge(x)” in FIG. 1 indicates the ratio between the numberof silicon atoms and the number of germanium atoms in the mixture is(1−x)/x, wherein the value of x is between 0 and 1. In an alternativeembodiment, the semiconductor substrate 110 comprises only germanium.

Next, in one embodiment, an insulating layer 120 such as a BOX (Buriedoxide) layer is formed on top of the semiconductor substrate 110.Illustratively, the BOX layer 120 comprises silicon dioxide (SiO2). Inone embodiment, the BOX layer 120 can be formed by thermal oxidation. Inan alternative embodiment, the insulating layer 120 is omitted.

Next, with reference to FIG. 2, in one embodiment, an implanted hydrogenion layer 210 is formed in the substrate 110. Illustratively, theimplanted hydrogen ion layer 210 is formed by ion implantation ofhydrogen ions. It should be noted that, the implanted hydrogen ion layer210 divides the semiconductor substrate 110 into two semiconductorlayers 112 and 114. In one embodiment, the thickness 112 a of thesemiconductor layer 112 is very thin and controlled.

Next, in one embodiment, with reference to FIG. 3, a semiconductor layer310 is bonded on top of the BOX layer 120 resulting in the structure 100of FIG. 3. In an alternative embodiment, no insulating layer 120 isformed on top of the semiconductor substrate 110 and the semiconductorlayer 310 is directly bonded on top of the semiconductor layer 110.Illustratively, the layer 310 comprises silicon and has acrystallographic orientation of (110).

Next, in one embodiment, the structure 100 of FIG. 3 can be annealed sothat the structure 100 of FIG. 3 splits along the hydrogen ion layer210. The upper portion of the structure 100 of FIG. 3 after the split,illustratively, is turned upside down resulting in the structure 100 ofFIG. 4.

Next, with reference to FIG. 5, in one embodiment, a pad layer 510 isformed on top of the semiconductor layer 112. Illustratively, the padlayer 510 comprises a silicon nitride layer and an optional underlyingoxide layer. The silicon nitride layer can be formed by CVD (Chemicalvapor deposition) and the underlying oxide layer may be formed bythermal oxidation or by CVD. Next, in one embodiment, the pad layer 510is patterned resulting in the structure 100 of FIG. 5A. Illustratively,the patterning of the pad layer 510 involves a lithographic process andone or multiple etching process.

Next, with reference to FIG. 5A, in one embodiment, the patterned padlayer 510 is used as a mask for selectively etching the semiconductorlayer 112, the BOX layer 120, and the semiconductor layer 310 resultingin the structure 100 of FIG. 6. Illustratively, the etching of thesemiconductor layer 112, the BOX layer 120 and the semiconductor layer310 involves a conventional etching process. Alternatively, the padlayer 510, the semiconductor layer 112, the BOX layer 120, and thesemiconductor layer 310 are patterned by using photoresist (not shown)as a mask, resulting in the same structure 100 shown in FIG. 6.

Next, in one embodiment, with reference to FIG. 7, a spacer 710 isformed on the side wall 712 of structure 100. Illustratively, the spacer710 comprises silicon oxide or silicon nitride. In one embodiment, thespacer 710 is formed by (i) depositing a spacer layer (not shown) on topof the structure 100 of FIG. 6 by CVD and then (ii) directionallyetching the deposited spacer layer resulting in structure 100 of FIG. 7.

Next, in one embodiment, with reference to FIG. 8A, a semiconductorregion 810 is formed on the surface 612 of the structure 100.Illustratively, the semiconductor region 810 comprises a mixture ofsilicon and germanium and has a crystallographic orientation of (110).It should be noted that the phrase “Si(1−z)Ge(z)” in FIG. 8A indicatesthe ratio between the number of silicon atoms and the number ofgermanium atoms in the mixture is (1−z)/z, wherein the value of z isbetween 0 and 1. In one embodiment, z is smaller than x (i.e., z<x),i.e., the concentration of germanium in the semiconductor region 810 isless than the germanium concentration in the semiconductor layer 112.Illustratively, the semiconductor region 810 is formed by epitaxialgrowth. In one embodiment, the epitaxial growth is performed until thetop surface 812 of the semiconductor region 810 is at a higher levelthan the top surface 512 of the nitride layer 510.

Next, in one embodiment, the semiconductor region 810 is recessed untilthe top surface 812 of the semiconductor region 810 is coplanar with topsurface 112′ of the semiconductor layer 112 resulting in the structure100 of FIG. 8B. In one embodiment, the semiconductor region 810 isrecessed by a reactive ion etching (RIE) process. In an alternativeembodiment, the semiconductor region 810 is recessed by oxidizing theexcessive semiconductor in region 810 and then selectively removing theformed oxide. Optionally, a planarization process such as CMP (chemicalmechanical polishing) can be performed before the recess process. Itshould be noted that what remains of the semiconductor region 810 (FIG.8A) after the recessing can be referred to as a semiconductor region 810a (FIG. 8B).

Next, in one embodiment, the structure 100 of FIG. 8B is subjected to anetch process such as a wet etching process or a plasma etching process,which strips off the patterned pad layer 510 and a top portion of thespacer 710 to expose the top surface 112′ of the semiconductor layer 112to the surrounding ambient resulting in the structure 100 of FIG. 9. Itshould be noted that what remains of the spacer 710 after the etchingcan be referred to as a spacer 710 a.

Next, with reference to FIG. 10, in one embodiment, a hard mask layer1010 is formed on top of the structure 100 of FIG. 9. Illustratively,the hard mask layer 1010 comprises a silicon nitride layer and anoptional underlying silicon oxide layer. In one embodiment, the hardmask layer 1010 is formed on top of the structure 100 of FIG. 9 bythermal oxidation followed by CVD of silicon nitride.

Next, in one embodiment, with reference to FIG. 11, a trench 1110 isformed in the structure 100. The trench 1110 is created at the locationwhere the nitride spacer 710 a of FIG. 10 was. In one embodiment, thetrench 1110 is formed by a conventional lithographic and etchingprocess.

Next, in one embodiment, with reference to FIG. 12, a shallow trenchisolation (STI) region 1210 is formed in the trench 1110 of FIG. 11.Illustratively, the shallow trench isolation (STI) region 1210 comprisessilicon dioxide. In one embodiment, the STI region 1210 is formed byfilling the trench 1110 in FIG. 11 with silicon dioxide followed by aplanarization process such as CMP.

Next, in one embodiment, the hard mask layer 1010 is removed resultingin the structure 100 of FIG. 13. Illustratively, the hard mask layer1010 is removed by wet etching.

Next, in one embodiment, with reference to FIG. 14, two semiconductorlayers 1410 and 1420 are grown simultaneously on top of semiconductorlayers 112 and 810 a, respectively. Illustratively, the semiconductorlayers 1410 and 1420 comprise a mixture of silicon and germanium. Itshould be noted that the phrase “Si(1−y)Ge(y)” in FIG. 14 indicates theratio between the number of silicon atoms and the number of germaniumatoms in the mixture is (1−y)/y, wherein the value of y is between 0and 1. In one embodiment, the value of y is between the values of x andz (i.e., x>y>z). Illustratively, the semiconductor layers 1410 and 1420are formed by epitaxial growth followed by CMP. Because thesemiconductor layer 1410 is grown on the semiconductor layer 112; as aresult, the crystallographic orientation of semiconductor layer 1410 isthe same as the crystallographic orientation of the semiconductor layer112 (i.e., (100)). Similarly, the semiconductor layer 1420 is grown onthe semiconductor layer 810 a; as a result, the crystallographicorientation of semiconductor layer 1420 is the same as thecrystallographic orientation of the semiconductor layer 810 a (i.e.,(110)). It should be noted that the percentage of germanium atoms in themixture in the semiconductor layer 1410 is less than that in thesemiconductor layer 112 (i.e., y<x); as a result, the semiconductorlayer 1410 is tensily strained. On the other hand, the percentage ofgermanium atoms in the mixture in the semiconductor layer 1420 is morethan that in the semiconductor layer 810 a (i.e., y>z); as a result, thesemiconductor layer 1420 is compressively strained.

Next, in one embodiment, with reference to FIG. 15, an N-channeltransistor 1590 a and a P-channel transistor 1590 b are formed on thesemiconductor layers 1410 and 1420 respectively. Illustratively, theN-channel transistor 1590 a comprises a gate electrode 1510 a, a gatedielectric layer 1530 a, two source/drain regions 1410 a 1 and 1410 a 2.In one embodiment, the N-channel transistor 1590 a is formed by aconventional method. Similarly, the P-channel transistor 1590 bcomprises a gate electrode 1510 b, a gate dielectric layer 1530 b, twosource/drain regions 1410 b 1 and 1410 b 2. Illustratively, theP-channel transistor 1590 b is formed by a conventional method. Itshould be noted that, the N-channel transistor 1590 a is formed on(100), tensily strained semiconductor material; as a result, theoperation of N-channel transistor 1590 a is optimized. Similarly, theP-channel transistor 1590 b is formed on (110), compressively strainedsemiconductor material; as a result, the operation of P-channeltransistor 1590 b is optimized. In one embodiment, the P-channeltransistor 1590 b and the N-channel transistor 1590 a are electricallyconnected to form a CMOS device.

In the embodiments described above, the regions 112, 810 a, 1410, and1420 comprise a mixture of silicon and germanium. Alternatively, theregions 112, 810 a, 1410, and 1420 can comprise a mixture of silicon andcarbon. In this case, the crystallographic orientation of the regions310, 112, 810 a, 1410, and 1420 should be swapped. More specifically,with reference to FIG. 14, the crystallographic orientation of thesemiconductor layers 310, 810 a and 1420 is (100), whereas thecrystallographic orientation of the semiconductor layers 112 and 1410 is(110). In this case, the ratio between the number of silicon atoms andthe number of carbon atoms in the mixture of 112 is (1−x)/x; the ratiobetween the number of silicon atoms and the number of carbon atoms inthe mixture of 810 a is (1−z)/z; and the ratio between the number ofsilicon atoms and the number of carbon atoms in the mixture of 1410 and1420 is (1−y)/y, wherein x>y>z.

While particular embodiments of the present invention have beendescribed herein for purposes of illustration, many modifications andchanges will become apparent to those skilled in the art. Accordingly,the appended claims are intended to encompass all such modifications andchanges as fall within the true spirit and scope of this invention.

1. A semiconductor structure fabrication method, comprising: providing asemiconductor structure which includes: (a) a substrate, (b) a firstsemiconductor region on top of the substrate, wherein the firstsemiconductor region comprises a first semiconductor material and asecond semiconductor material, which is different from the firstsemiconductor material, and wherein the first semiconductor region has afirst crystallographic orientation, and (c) a third semiconductor regionon top of the substrate, wherein the third semiconductor regioncomprises the first and the second semiconductor materials, and whereinthe third semiconductor region has a second crystallographicorientation; and forming a second semiconductor region and a fourthsemiconductor region on top of the first and the third semiconductorregions respectively, wherein the second semiconductor region comprisesthe first and the second semiconductor materials, wherein the secondsemiconductor region has the first crystallographic orientation, whereinthe fourth semiconductor region comprises the first and the secondsemiconductor materials, and wherein the fourth semiconductor region hasthe second crystallographic orientation.
 2. The method of claim 1,wherein a second ratio in number of atoms of the first semiconductormaterial to the second semiconductor material in the secondsemiconductor region is equal to a fourth ratio in number of atoms ofthe first semiconductor material to the second semiconductor material inthe fourth semiconductor region.
 3. The method of claim 1, wherein thefirst semiconductor material comprises germanium, and wherein the secondsemiconductor material comprises silicon.
 4. The method of claim 1,wherein the first semiconductor material comprises carbon, and whereinthe second semiconductor material comprises silicon.
 5. The method ofclaim 1, wherein the first crystallographic orientation is (100), andwherein the second crystallographic orientation is (110).
 6. The methodof claim 1, wherein the second and fourth semiconductor regions areformed simultaneously.
 7. The method of claim 6, further comprisingforming an N-channel transistor and a P-channel transistor on the secondand fourth semiconductor regions, respectively.
 8. The method of claim1, wherein a first ratio in number of atoms of the first semiconductormaterial to the second semiconductor material in the first semiconductorregion is greater than the second ratio in number of atoms of the firstsemiconductor material to the second semiconductor material in thesecond semiconductor region.
 9. The method of claim 1, wherein a thirdratio in number of atoms of the first semiconductor material to thesecond semiconductor material in the third semiconductor region issmaller than the fourth ratio in number of atoms of the firstsemiconductor material to the second semiconductor material in thefourth semiconductor region.
 10. The method of claim 1, wherein saidforming the second semiconductor region and the fourth semiconductorregion comprises epitaxially growing a mixture of the first and secondsemiconductor materials on top of the first and the third semiconductorregions.